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High Speed Devices and Circuits

High Speed Devices and Circuits. Instructor: Prof. K. N. Bhat, Department of Electrical Engineering, IIT Madras. This course discusses topics: important parameters governing the high speed performance of devices and circuits; silicon based MOSFET and BJT circuits for high speed operation and their limitations; materials for high speed devices and circuits; metal semiconductor contacts and Metal Insulator Semiconductor and MOS devices; Metal semiconductor Field Effect Transistors (MESFETs); High Electron Mobility Transistors (HEMT); Heterojunction Bipolar Transistors (HBTs); high speed Circuits; and high frequency resonant-tunneling devices. (from nptel.ac.in)

Lecture 10 - Molecular Beam Epitaxy and Liquid-Phase Epitaxy for GaAs Epitaxy

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Lecture 01 - Introduction to Basic Concepts

Lecture 02 - Requirements for High Speed Circuits, Devices and Materials

Lecture 03 - Classification and Properties of Semiconductor Devices

Lecture 04 - Ternary Compound Semiconductors and their Applications

Lecture 05 - Ternary Compound Semiconductors and their Applications (cont.)

Lecture 06 - Crystal Structures in GaAs

Lecture 07 - Dopants and Impurities in GaAs and InP

Lecture 08 - Brief Overview of GaAs Technology for High Speed Devices

Lecture 09 - Epitaxial Techniques for GaAs and High Speed Devices

Lecture 10 - Molecular Beam Epitaxy and Liquid-Phase Epitaxy for GaAs Epitaxy

Lecture 11 - GaAs and InP Devices for Microelectronics

Lecture 12 - Metal Semiconductor Contacts for MESFET

Lecture 13 - Metal Semiconductor Contacts for MESFET (cont.)

Lecture 14 - Metal Semiconductor Contacts for MESFET (cont.)

Lecture 15 - Ohmic Contacts on Semiconductors

Lecture 16 - Fermi Level Pinning, I-V Characteristics of Schottky Barrier Diodes

Lecture 17 - Schottky Barrier Diodes: I-V Characteristics and the Non-Idealities

Lecture 18 - Schottky Barrier Diodes: I-V Characteristics and the Non-Idealities (cont.)

Lecture 19 - Causes of the Non-Idealities in Schottky Barrier Diodes (I-V Characteristics)

Lecture 20 - MESFET Operation and I-V Characteristics

Lecture 21 - I-V Characteristics: Shockley's Model

Lecture 22 - MESFET Shockley's Model and Velocity Saturation Effect

Lecture 23 - MESFET Velocity Saturation Effect on Drain Current Saturation

Lecture 24 - MESFET: Drain Current Saturation Ids due to Velocity Saturation

Lecture 25 - MESFET: Effects of Channel Length and Gate Length on I_DS and g_m

Lecture 26 - MESFET: Effects of Velocity Saturation and Velocity Field Characteristics

Lecture 27 - MESFET: Effects of Velocity Field Characteristics - Overshoot Effects

Lecture 28 - MESFET: Velocity Overshoot Effect and Self Aligned MESFET-SAINT

Lecture 29 - Self Aligned MESFET-SAINT Threshold Voltage and Subthreshold Current

Lecture 30 - Hetero Junctions

Lecture 31 - Hetero Junctions and High Electron Mobility Transistor (HEMT)

Lecture 32 - Hetero Junctions and High Electron Mobility Transistor (HEMT) (cont.)

Lecture 33 - High Electron Mobility Transistor (HEMT)

Lecture 34 - HEMT: Off Voltage, I-V Characteristics and Transconductance

Lecture 35 - HEMT: I-V Characteristics and Transconductance and Optimization

Lecture 36 - Indium Phosphide based HEMT

Lecture 37 - Pseudomorphic HEMT and Heterojunction Bipolar Transistors

Lecture 38 - Heterojunction Bipolar Transistors (HBT)

Lecture 39 - Heterojunction Bipolar Transistors (HBT) (cont.)

Lecture 40 - Heterojunction Bipolar Transistors (HBT) (cont.)

Lecture 41 - Heterojunction Bipolar Transistors (HBT) (cont.)