Fabrication of Silicon VLSI Circuits using the MOS Technology
Fabrication of Silicon VLSI Circuits using the MOS Technology. Instructor: Prof. A N Chandorkar, Department of Electrical Engineering, IIT Bombay. This course covers topics in VLSI circuit fabrication and surface micromachining technology - crystal growth; clean rooms; solid state diffusion modeling and technology; ion implantation modeling, technology and damage annealing, characterization of impurity profiles; oxidation: kinetics of silicon dioxide growth for thick, thin and ultrathin films; oxidation technologies in VLSI and ULSI, characterization of oxide films, high k and low k dielectrics for ULSI; lithography: photolithography, E-beam lithography and newer lithography techniques for VLSI/ULSI mask generation; chemical vapour deposition techniques: CVD techniques for deposition of polysilicon, silicon dioxide, silicon nitride and metal films, epitaxial growth of silicon, modeling and technology; metal film deposition: evaporation and sputtering techniques; failure mechanisms in metal interconnects, multilevel metalization schemes; plasma and rapid thermal processing: PECVD, plasma etching and RIE techniques, RTP techniques for annealing, growth and deposition of various films for use in ULSI. (from nptel.ac.in)
| Lecture 19 - Ion Implantation |
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