Semiconductor Device Modeling (Prof. Shreepad Karmalkar, IIT Madras) | Electronics and Electrical Engineering

Semiconductor Device Modeling

Semiconductor Device Modeling. Instructor: Prof. Shreepad Karmalkar, Department of Electrical Engineering, IIT Madras. This course assumes that you have studied solid state devices covering topics: concentration and transport of carriers in semiconductors, analysis of diodes, BJTs and MOSFETs leading to simple current-voltage equations for these devices. This course shall discuss qualitative model of semi-classical bulk transport; the electromagnetic field and transport equations of this semi-classical bulk transport; drift-diffusion transport model, equations, boundary conditions, mobility and generation/recombination; the characteristic times and lengths, which are used in device modeling; the energy band diagrams, which is a very important tool both for representing conditions in a device and for analyzing conditions in a device; the 9 steps of deriving a device model; modeling of the MOSFET; structure and characteristics and qualitative understanding of the operation of a MOSFET. (from nptel.ac.in)

Motivation, Contents and Learning Outcomes

Lecture 01 - Motivation, Contents and Learning Outcomes

Lecture 02 - Introduction

Semi-classical Bulk Transport: Qualitative Model

Lecture 03 - Phenomena of Carrier Transport, Qualitative Modelling, Particle Approximation

Lecture 04 - Bulk of a Large Semiconductor under Equilibrium

Lecture 05 - Charge Transport in the Bulk of a Large Semiconductor, Effective Mass Approximation

Lecture 06 - Balances of Carrier Density, Momentum and Energy Densities of Carriers

Lecture 07 - Velocity Overshoot in response to a Temporal Step in Electric Field

Semi-classical Bulk Transport: EM field and Transport Equations

Lecture 08 - Electromagnetic Field Equations, The Form of Transport Equations

Lecture 09 - Micro to Macro Level Descriptions of Carrier Transport

Lecture 10 - Equations for Semi-classical Carrier Transport

Lecture 11 - Fundamental Ensemble Viewpoint of Getting the Device Current

Lecture 12 - Solving the Boltzmann Transport Equation: Displaced-Maxwell Approximation

Lecture 13 - Solving the Boltzmann Transport Equation: Balance Equations

Lecture 14 - Balance Equations: Velocity Saturation, Velocity Overshoot, Current Density

Lecture 15 - Drift-Diffusion Current Density Model, General Form of Transport Equations

Drift-Diffusion Transport Model: Equations, Boundary Conditions, Mobility and Generation/ Recombination

Lecture 16 - Drift-Diffusion Transport Model: Equations and Boundary Conditions

Lecture 17 - Drift-Diffusion Transport Model: Mobility in Bulk and Inversion Layers

Lecture 18 - Mobility in Inversion Layer (cont.), Complete Field Dependent Mobility Model

Lecture 19 - Drift-Diffusion Transport Model: Generation and Recombination Mechanisms

Lecture 20 - Summary of Drift-Diffusion Transport Model

Characteristic Times and Lengths

Lecture 21 - Minority Carrier Lifetime, Dielectric Relaxation Time

Lecture 22 - Dielectric Relaxation Time (cont.), Momentum and Energy Relaxation Times

Lecture 23 - Transit Time, Diffusion Length

Lecture 24 - Debye Length, Magnitudes of Characteristic Times and Lengths

Lecture 25 - Utility of Characteristic Times and Lengths

Lecture 26 - Utility of Characteristic Times and Lengths (cont.)

Energy Band Diagrams

Lecture 27 - Introduction, Energy Band Formation: Qualitative Model, E-k Diagram

Lecture 28 - E-k Diagram: E?k Relation for Electrons in a Periodic Potential

Lecture 29 - Utility of the E-k Relation, Energy Distance Diagrams

Lecture 30 - Energy Distance Diagrams (E-x Diagrams)

Lecture 31 - E-x Diagram for Semiconductors and Devices

Lecture 32 - E-x diagrams of a Hetero-junction under Equilibrium and a p-n Junction under High Forward Bias, 2D Band Diagrams

Lecture 33 - Correspondence between E-k and E-x Diagrams, Summary

SQEBASTIP: Nine Steps of Deriving a Device Model

Lecture 34 - Structure and Characteristics of the Device to Scale, Qualitative Model

Lecture 35 - Equations, Boundary Conditions, Approximations, Closed Form Solution

Lecture 36 - Testing, Improvement and Parameter Extraction, Summary

Types of Device Models

Lecture 37 - Types of Device Models, Part 1

Lecture 38 - Types of Device Models, Part 2

MOSFET: Device Structures and Characteristics

Lecture 39 - MOSFET: Device Structures and Characteristics, Part 1

Lecture 40 - MOSFET: Device Structures and Characteristics, Part 2

DC Model of a Large Uniformly Doped Bulk MOSFET: Qualitative Theory

Lecture 41 - DC Characteristics of a Large Uniformly Doped Bulk MOSFET 1

Lecture 42 - DC Characteristics of a Large Uniformly Doped Bulk MOSFET 2

Lecture 43 - DC Characteristics of a Large Uniformly Doped Bulk MOSFET 3

Lecture 44 - DC Characteristics of a Large Uniformly Doped Bulk MOSFET 4

Lecture 45 - DC Characteristics of a Large Uniformly Doped Bulk MOSFET 5

Lecture 46 - DC Characteristics of a Large Uniformly Doped Bulk MOSFET 6

References

Semiconductor Device Modeling
Instructor: Prof. Shreepad Karmalkar, Department of Electrical Engineering, IIT Madras. This course shall discuss qualitative model of semi-classical bulk transport; the electromagnetic field and transport equations of this semi-classical bulk transport, ...